
{Parameters for the new MOS models developed by Michael Godfrey}

{Physical Constants}

{Temperature}
32: Physical T 298

{Boltzmann's constant}
32: Physical k  1.380658e-23

{Charge on an electron}
32: Physical q  1.60217733e-19

{permittivity of vacuum f/m}
32: Physical e_v 8.854187817e-12

{permittivity of Si f/m}
32: Physical e_s 1.035939974589e-010

{permittivity of SiO2 f/m}
32: Physical e_ox 3.453133248630e-011

{silicon-oxide interface charge}
32: Physical phi_ms -0.3


{parameters for N model}

{MOSIS Process Name: See MOSIS file scn12-hp-specs.inf}
32: DevTechN Process SCN12

{photolithography scaling factor -- identical for P and N}
{Value for 1.2um process: appropriate for HP SCN12}
32: DevTechN lambda 0.6e-6

{oxide thickness}
32: DevTechN Tox 200e-10

{potential at neutral edge of depletion region}
32: DevTechN psi 0.6

{bulk doping concentration}
32: DevTechN Na 3.1060e+16

{carrier mobility}
32: DevTechN mu0 686.6

{Ldrawn-Leff}
32: DevTechN deltaL 0.33e-6

{Wdrawn-Weff}
32: DevTechN deltaW 0.49e-6

{drain-dependence Na factor}
32: DevTechN del_NaS 0

{Early effect slope parameter}
32: DevTechN Early_s 0.16

{Early effect intercept parameter}
32: DevTechN L_0 0.1e-6

{Run Specific Parameters}

{The specific fab run name}
32: RunSpecN Fabrun N52V

{fixed oxide charge}
32: RunSpecN Qss 0.00061

{Na multiplicative delta}
32: RunSpecN del_Na0 1

{mu multiplicative delta}
32: RunSpecN del_mu 1

{AC Parameters}

{N+ active (source/drain area) Capacitance F/um^2                       }
{MOSIS CAPCITANCE TABLE Area (substrate) -- N+DIFF or SPICE CMOSN CJ    }
32: DevTechN aCactive 262e-18

{Well-to-bulk Capacitance F/um^2                                        }
{Since the n-channel transistor is in the substrate, this parameter     }
{is meaningless. We choose an insignificantly small value (not zero) to }
{prevent numerical problems in the simulation engine                    } 
32: DevTechN aCwell 1e-18

{Overlap capacitance between gate and source F/um }
{SPICE CGDO or CGSO * 10-6}
32: DevTechN linCgs 3.9687e-16

{Gate capacitance -- used for AC parasitics only F/um^2}
{The nonlinear C(V) function is upper-bounded by Cox,                   }
{and close to CGBO in subthreshold, which we use below.                 }
{Replace with COX for conservative delay estimates for digital designs. }
32: DevTechN aCgw 3.8241e-16


{Parameters for P model}

{oxide thickness}
32: DevTechP Tox 200e-10

{potential at neutral edge of depletion region}
32: DevTechP psi 0.6

{bulk doping concentration}
32: DevTechP Na 2.692e16

{carrier mobility}
32: DevTechP mu0 205.0

{Wdrawn-Weff}
32: DevTechP deltaW  0.04e-6

{Ldrawn-Leff}
32: DevTechP deltaL 0.41e-6

{drain-dependence Na factor}
32: DevTechP del_NaS 0

{Early effect slope parameter}
32: DevTechP Early_s 0.16

{Early effect intercept parameter}
32: DevTechP L_0 0.1e-6

{Run Specific Parameters}

{fixed oxide charge}
32: RunSpecP Qss 0.000126

{oxide thickness}
32: RunSpecP del_Na0 1

{oxide thickness}
32: RunSpecP del_mu 1

{AC Parameters}

{P+ active (source/drain area) Capacitance F/um^2}
{MOSIS CAPCITANCE TABLE Area (substrate) -- P+DIFF or SPICE CMOSP CJ      }
32: DevTechP aCactive 470e-18

{Well-to-bulk Capacitance F/um^2}
{Since the p-channel transistor is in the well, this parameter has        }
{meaning. This parameter is not specified by MOSIS, nor is it in the HP   }
{specs, so we have to make a guess.					  }
{Here, we use half the P+DIFF capacitance as a (very loose) upper bound   }
32: DevTechP aCwell 272e-18

{Overlap capacitance between gate and source F/um }
{SPICE CGDO or CGSO * 10-6}
32: DevTechP linCgs 4.7888e-17

{Gate capacitance -- used for AC parasitics only F/um^2}
{The nonlinear C(V) function is upper-bounded by Cox,                     }
{and close to CGBO in subthreshold, which we use below.                   }
{This gives conservative delay estimates, for digital purposes.           }
32: DevTechP aCgw 3.5683e-16


{Individual Transistor Models}

{Gate width of transistor, lambda}
32: Nfet7F Wdrawn 6

{Gate length of transistor, lambda}
32: Nfet7F Ldrawn 4

{Area of source region, m^2}
32: Nfet7F SArea 36e-6

{Area of drain region, m^2}
32: Nfet7F DArea 36e-6

{Area of well region, m^2}
32: Nfet7F WArea 100e-6

{offset in Na density, multiplicative unitless}
32: Nfet7F NaOffset 1.0

{offset in mobility, multiplicative unitless}
32: Nfet7F MuOffset 1.0

{offset in Qss, additive (C)}
32: Nfet7F QssOffset 0.0

{Gate width of transistor, lambda}
32: Nfet7T Wdrawn 6

{Gate length of transistor, lambda}
32: Nfet7T Ldrawn 4

{Area of source region, m^2}
32: Nfet7T SArea 36e-6

{Area of drain region, m^2}
32: Nfet7T DArea 36e-6

{Area of well region, m^2}
32: Nfet7T WArea 100e-6

{offset in Na density, multiplicative unitless}
32: Nfet7T NaOffset 1.0

{offset in Mu0 mobility, multiplicative unitless}
32: Nfet7T MuOffset 1.0

{offset in Qss, additive (C)}
32: Nfet7T QssOffset 0.0

{Gate width of transistor, lambda}
32: Pfet7F Wdrawn 6

{Gate length of transistor, lambda}
32: Pfet7F Ldrawn 4

{Area of source region, m^2}
32: Pfet7F SArea 36e-6

{Area of drain region, m^2}
32: Pfet7F DArea 36e-6

{Area of well region, m^2}
32: Pfet7F WArea 100e-6

{offset in Na density, multiplicative unitless}
32: Pfet7F NaOffset 1.0

{offset in mobility, multiplicative unitless}
32: Pfet7F MuOffset 1.0

{offset in Qss, additive (C)}
32: Pfet7F QssOffset 0.0

{Gate width of transistor, lambda}
32: Pfet7T Wdrawn 6

{Gate length of transistor, lambda}
32: Pfet7T Ldrawn 4

{Area of source region, m^2}
32: Pfet7T SArea 36e-6

{Area of drain region, m^2}
32: Pfet7T DArea 36e-6

{Area of well region, m^2}
32: Pfet7T WArea 100e-6

{offset in Na density, multiplicative unitless}
32: Pfet7T NaOffset 1.0

{offset in mobility, multiplicative unitless}
32: Pfet7T MuOffset 1.0

{offset in Qss, additive (C)}
32: Pfet7T QssOffset 0.0








